Specifications of Multiple Silicon Wafer for Sollar cell(156mm Grade A)Soft Offer

Origin:

Manufactured in Japan:Sharp

Grade:

A-1

Dimensions

(mm):

156x156(+/-0.5)mm

Type:

P-Type, (dopant Boron)

Thickness

(mm):

200um

On the Cross:

218(+/-1)mm

Carbon content:

<1x1017 atoms/cm3

Square Angle:

90+/-0.8

Oxygen content:

< 1x1018 atoms/cm3

Saw Mark:

<15um

Resistivity

Ohm Cm:

0.5—3,

3—6

Edge Defect:

Length<5mm, Depth<0.5mm

Orientation degree:

N/A

Bevel Edge Length:

<3mm

Life Time:

>2 microseconds

TTV/Warp:

TTV</=50um,Warp<50um

Price

warehouse, Tokyo.

Derivery

Quantity Available

Payment

Stock Quantity

Remark

5—20% of Broken edge